Thermal Management Strategies for eGaN FETs

This technical report presents thermal management strategies for enhancement-mode gallium nitride (eGaN®) FETs, focusing on improving heat dissipation to enhance performance and reliability. The document outlines the importance of managing thermal overheating due to high power-density capabilities and extreme heat-flux densities. It details the two main heat conduction paths for packaged electronic devices: to the printed circuit board (PCB) and to the case. The report provides guidelines for optimizing thermal performance through effective thermal management practices, including the use of thermal interface materials (TIMs) and strategic design choices such as thicker copper traces and thermal vias. A case study illustrates effective cooling solutions for a development board with active GaN FETs. The document also discusses junction-to-board and junction-to-case thermal improvement strategies, emphasizing the role of heat spreaders and heatsinks in enhancing thermal conductance. Overall, the report serves as a comprehensive guide for engineers working with eGaN FETs in power conversion applications.