CoolMOS CP Technology Application Note

This application note provides a detailed overview of the CoolMOS CP technology, which is designed for high voltage power MOSFETs based on the superjunction principle. It outlines the advancements in performance, including reduced drain-source on-resistance (RDSon), ultra-low total gate charge, and improved switching speeds. The note compares the CoolMOS CP series with its predecessor, the C3 series, highlighting key specifications such as conduction and switching losses, thermal resistance, and energy stored in output capacitance. The document also discusses the implications of these features for various applications, including server and telecom power supplies, notebook adapters, and lighting ballasts. Additionally, it presents a selection guide for MOSFETs based on loss balance and provides circuit design recommendations. The application note serves as a technical resource for engineers and designers looking to optimize power semiconductor performance in their applications.