Infineon Technologies
Efficiency Improvements in Resonant Converters Using MOSFET Technology
Pages
11
Time to read
25 mins
Publication
Language
English
Pages
11
Time to read
25 mins
Publication
Language
English
This technical report discusses advancements in power MOSFET technology aimed at enhancing efficiency in resonant converters. It outlines a new trench power MOSFET design that significantly improves switching performance and reduces losses in soft-switching applications. The report details how this novel design approach addresses key loss mechanisms, particularly in Zero Voltage Switching (ZVS) scenarios, thereby enhancing overall system efficiency. It compares traditional stripe-shaped trench designs with a new grid-like layout, highlighting the benefits of the latter in terms of on-resistance and efficiency metrics. The document also examines the impact of device structure on performance, emphasizing the importance of minimizing gate charge and optimizing capacitance characteristics. Furthermore, it presents simulation results that illustrate the improved switching behavior of the new MOSFET design, demonstrating faster switching times and reduced losses compared to previous technologies. Overall, the findings indicate that the new MOSFET technology is well-suited for high-frequency power management applications.